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| Excelics DATA SHEET * * * * * * +23.0dBm TYPICAL OUTPUT POWER 10.5 dB TYPICAL POWER GAIN AT 12GHz 0.3 X 400 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY Idss SORTED IN 10mA PER BIN RANGE EFA040A Low Distortion GaAs Power FET ' 6 * 6 ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS P1dB G1dB PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression Vds=8V, Ids=50% Idss Gain at 1dB Compression Vds=8V, Ids=50% Idss Gain at 1dB Compression Vds=8V, Ids=50% Idss Saturated Drain Current Transconductance Pinch-off Voltage f=12GHz f=18GHz f=12GHz f=18GHz f=12GHz Chip Thickness: 75 13 microns All Dimensions In Microns MIN 21.0 9.0 TYP 23.0 23.0 10.5 8.0 35 MAX UNIT dBm dB % Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=1.0 mA 60 45 105 60 -2.0 160 mA mS -3.5 V V V o Drain Breakdown Voltage Igd=1.0mA Source Breakdown Voltage Igs=1.0mA Thermal Resistance (Au-Sn Eutectic Attach) -12 -7 -15 -14 105 C/W MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 12V 8V Vds Gate-Source Voltage -8V -4V Vgs Drain Current Idss 135mA Ids Forward Gate Current 10mA 2mA Igsf Input Power 22dBm @ 3dB Compression Pin o Channel Temperature 175 C 150oC Tch o Storage Temperature -65/175 C -65/150oC Tstg Total Power Dissipation 1.3W 1.1W Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com EFA040A DATA SHEET Low Distortion GaAs Power FET S-PARAMETERS FREQ (GHz) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 Note: --- S11 --MAG ANG 0.989 -21.4 0.970 -41.5 0.942 -60.3 0.915 -77.6 0.888 -94.0 0.870 -107.0 0.856 -118.1 0.846 -127.2 0.840 -135.1 0.834 -142.0 0.833 -148.6 0.829 -154.2 0.828 -160.2 0.826 -166.5 0.823 -173.0 0.824 180.0 0.823 172.7 0.822 165.6 0.824 159.0 0.827 153.0 0.845 151.3 0.853 148.1 0.859 145.0 0.862 143.0 0.870 141.1 0.866 139.5 8V, 1/2 Idss --- S21 --MAG ANG 4.677 163.5 4.457 149.3 4.164 135.7 3.845 123.2 3.529 111.1 3.204 100.9 2.914 91.6 2.663 83.2 2.442 75.5 2.258 68.4 2.115 61.5 1.985 54.8 1.880 48.1 1.799 41.4 1.721 34.6 1.652 27.4 1.583 19.9 1.510 12.5 1.436 5.0 1.358 -2.3 1.218 -8.6 1.144 -14.9 1.073 -20.7 1.012 -26.4 0.965 -31.9 0.915 -36.9 --- S12 --MAG ANG 0.019 78.1 0.036 67.0 0.049 56.3 0.060 47.3 0.068 38.6 0.072 32.1 0.075 27.0 0.077 21.2 0.078 16.6 0.077 13.1 0.078 10.0 0.078 6.9 0.078 3.7 0.079 1.1 0.079 -1.5 0.080 -4.8 0.082 -7.8 0.082 -10.9 0.082 -13.6 0.083 -16.4 0.078 -18.8 0.076 -20.1 0.076 -19.7 0.073 -20.1 0.074 -18.3 0.074 -17.5 --- S22 --MAG ANG 0.665 -7.4 0.646 -15.3 0.615 -22.4 0.584 -29.1 0.550 -36.2 0.526 -42.3 0.508 -48.4 0.496 -54.3 0.487 -60.1 0.482 -65.4 0.478 -70.9 0.476 -76.3 0.471 -81.7 0.465 -86.7 0.457 -92.5 0.446 -98.7 0.434 -106.0 0.422 -114.2 0.412 -123.8 0.409 -134.1 0.445 -148.8 0.467 -158.9 0.496 -166.3 0.533 -173.2 0.565 -179.5 0.595 176.0 The data included 0.7 mils diameter Au bonding wires: 1 gate wires, 15 mils each; 1 drain wires, 20 mils each; 4 source wires, 7 mils each. |
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